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1 www.irf.com ? 2012 international rectifier january 09, 2013 base part number package type standard pack orderable part number form quantity IRG7PH50K10DPBF to-247ac tube 25 IRG7PH50K10DPBF irg7ph50k10d-epbf to-247ad t ube 25 irg7ph50k10d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 90 a ? i c @ t c = 100c continuous collector current 50 i cm pulse collector current, v ge =20v 160 i lm clamped inductive load current, v ge =20v ? 160 i f @ t c = 25c diode continous forward current 20 i f @ t c = 100c diode continous forward current 10 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 400 w p d @ t c = 100c maximum power dissipation 160 t j operating junction and -40 to +150 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.3 c/w r ? cs thermal resistance, case-to-sink (f lat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 1.4 v ces = 1200v i c = 50a, t c =100c t sc ?? 10s, t j(max) = 150c v ce(on) typ. = 1.9v @ i c = 35a g c e gate collector emitter applications ? industrial motor drive ? ups ? solar inverters ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 10s short circuit soa square rbsoa maximum junction temperature 150c increased reliability positive v ce (on) temperature coefficient excellent current sharing in parallel operation rugged transient performance ? IRG7PH50K10DPBF irg7ph50k10d-epbf insulated gate bipolar transistor with ultrafast soft recovery diode ? ? g g e c g g c e IRG7PH50K10DPBF ? ? irg7ph50k10d \ epbf ? e g n-channel c
? IRG7PH50K10DPBF/irg7ph50k10d-epbf electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.4 ? v/c v ge = 0v, i c = 2ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.9 2.4 v i c = 35a, v ge = 15v, t j = 25c ? 2.4 ? i c = 35a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 5.0 ? 7.5 v v ce = v ge , i c = 1.7ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -16 ? mv/c v ce = v ge , i c = 1.7ma (25c-150c) gfe forward transconductance ? 20 ? s v ce = 50v, i c = 35a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 35 a v ge = 0v, v ce = 1200v ? 1200 ? v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v v f ? ? 2.5 3.3 v i f = 8a ? 2.4 ? v i f = 8a, t j = 150c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 200 300 nc i c = 35a q ge gate-to-emitter charge (turn-on) ? 40 60 v ge = 15v q gc gate-to-collector charge (turn-on) ? 90 135 v cc = 600v e on turn-on switching loss ? 2.6 3.5 mj ? i c = 35a, v cc = 600v, v ge =15v r g = 5 ? , t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss 1.6 2.5 e total total switching loss ? 4.2 ? 6.0 ? t d(on) turn-on delay time ? 90 105 ns ? t r rise time ? 60 80 t d(off) turn-off delay time ? 340 390 t f fall time ? 90 110 e on turn-on switching loss ? 3.5 ? mj ? i c = 35a, v cc = 600v, v ge =15v r g = 5 ? , t j = 150c energy losses include tail & diode reverse recovery ?? ? e off turn-off switching loss ? 2.8 ? e total total switching loss 6.3 t d(on) turn-on delay time ? 70 ? ns t r rise time ? 60 ? t d(off) turn-off delay time ? 350 ? t f fall time ? 250 ? c ies input capacitance ? 4300 ? v ge = 0v c oes output capacitance ? 190 ? pf v cc = 30v c res reverse transfer capacitance ? 100 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 160a full square v cc = 960v, vp 1200v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 10 ? ? ? ? ? s ? t j = 150c,v cc = 600v, vp 1200v v ge = +15v to 0v erec reverse recovery energy of the diode ? 190 ? j t j = 150c t rr diode reverse recovery time ? 130 ? ns v cc = 600v, i f = 8a i rr peak reverse recovery current ? 13 ? a v ge = 15v, rg = 5 ? diode forward voltage drop ? 2 www.irf.com ? 2012 international rectifier january 09, 2013 notes: ? v cc = 80% (v ces ), v ge = 20v ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement .
? IRG7PH50K10DPBF/irg7ph50k10d-epbf 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 70 80 90 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 161w i square wave: v cc diode as specified 3 www.irf.com ? 2012 international rectifier january 09, 2013 fig. 5- reverse bias soa t j = 150c; v ge = 20v 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 150c single pulse dc fig. 4 - forward soa t c = 25c, t j ? 150c, v ge =15v fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature 25 50 75 100 125 150 t c (c) 0 20 40 60 80 100 i c ( a ) 25 50 75 100 125 150 t c (c) 0 50 100 150 200 250 300 350 400 450 p t o t ( w ) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental)
? IRG7PH50K10DPBF/irg7ph50k10d-epbf fig. 10 - typical v ce vs. v ge t j = -40c 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 0.0 2.0 4.0 6.0 8.0 10.0 v f (v) 0 20 40 60 80 100 120 140 160 i f ( a ) t j =150c t j = 25c tj = -40c fig. 9 - typ. diode forward characteristics tp = 20s fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20s 4 www.irf.com ? 2012 international rectifier january 09, 2013 fig. 11 - typical v ce vs. v ge t j = 25c 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a
? IRG7PH50K10DPBF/irg7ph50k10d-epbf 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 468101214 v ge, gate-to-emitter voltage (v) 0 20 40 60 80 100 120 140 160 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c tj = 150c 0 10 20 30 40 50 60 70 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 1020304050607080 i c (a) 0 2 4 6 8 10 e n e r g y ( m j ) e off e on fig. 15 - typ. switching time vs. i c t j = 150c; v ce = 600v, r g = 5 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 1 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 5 www.irf.com ? 2012 international rectifier january 09, 2013 fig. 17 - typ. switching time vs. rg t j = 150c; v ce = 600v, i ce = 35a; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 0 2 4 6 8 10 e n e r g y ( m j ) e off e on fig. 16 - typ. energy loss vs. rg t j = 150c; v ce = 600v, i ce = 35a; vge = 15v fig. 12 - ty pical v ce vs. v ge t j = 150c fig. 14 - typ. energy loss vs. i c t j = 150c; v ce = 600v, r g = 5 ? ; v ge = 15v
? IRG7PH50K10DPBF/irg7ph50k10d-epbf 10 11 12 13 14 15 16 v ge (v) 5 10 15 20 25 30 35 t i m e ( s ) 40 80 120 160 200 240 280 c u r r e n t ( a ) t sc i sc fig. 23 - v ce vs. short circuit time v cc = 600v; t c = 150c fig. 21 - typ. diode q rr vs. dif/dt v cc = 600v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 4 6 8 10 12 14 16 i f (a) 2 6 10 14 18 i r r ( a ) r g = ?? r g = 47 ? r g = 10 ? r g = 100 ? 0 100 200 300 400 500 di f /dt (a/s) 5 7 9 11 13 15 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 150c 0 20 40 60 80 100 120 r g ( ? ) 2 4 6 8 10 12 14 i r r ( a ) fig. 19 - typ. diode i rr vs. r g 0 100 200 300 400 500 di f /dt (a/s) 200 400 600 800 1000 1200 1400 1600 1800 q r r ( n c ) ?? ??? ???? ??? 4a 16a 8a 2 4 6 8 10 12 14 16 18 i f (a) 0 50 100 150 200 250 300 350 e n e r g y ( j ) r g =10 ? r g = ?? r g = 47 ? r g = 100 ? fig. 20 - typ. diode i rr vs. dif/dt v cc = 600v; v ge = 15v; i f = 8a; t j = 150c 6 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26 maximum transient thermal impedance, junction-to-case (igbt) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 27 maximum transient thermal impedance, junction-to-case (diode) ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri ? (c/w) ?? i ? (sec) ? 0.0108 0.00001 0.5322 0.00041 0.5460 0.00340 0.3107 0.02493 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri ? (c/w) ?? i ? (sec) ? 0.0149 0.00005 0.0670 0.00017 0.1384 0.00422 0.0908 0.02614 0 40 80 120 160 200 240 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v fig. 25 - typical gate charge vs. v ge i ce = 35a 7 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense 8 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf fig. wf1 - typ. turn-off loss waveform @ tj = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ tj = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ tj = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 -10 0 10 20 30 40 50 60 70 80 -100 0 100 200 300 400 500 600 700 800 -0.4 -0.2 0 0.2 0.4 0.6 0.8 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -10 0 10 20 30 40 50 60 70 80 -100 0 100 200 300 400 500 600 700 800 -0.4 -0.2 0 0.2 0.4 0.6 0.8 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -30 -15 0 15 30 45 -0.200.000.200.400.600.80 v f (v) time (s) peak i rr t rr q rr -50 0 50 100 150 200 250 300 350 -100 0 100 200 300 400 500 600 700 -10-5 0 5 101520 ice (a) vce (v) time (us) v ce i ce 9 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf to-247ac package outline dimensions are shown in millimeters (inches) 2x c "a" "a" e e2/ 2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi ew "b" b4 b a ? . 010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi ew : "b" section: c- c, d-d, e-e (b, b2, b4) (c) base meta l plati ng vi ew : "a" - "a" year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. 10 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. assem bly year 0 = 2000 assem bled o n w w 35, 2000 in th e assem bly lin e "h " exam ple: this is an irg p30b120kd-e lo t co de 5657 with assem bly part n um ber date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lo t c o d e n ote: "p" in assem bly line position indicates "lead-free" 11 www.irf.com ? 2012 international rectifier january 09, 2013
? IRG7PH50K10DPBF/irg7ph50k10d-epbf qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac to-247ad rohs compliant yes n/a data and specifications subject to change without notice. ir world headquarters: 101n sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . ? qualification standards can be found at international rectifier?s web site: h ttp://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. 12 www.irf.com ? 2012 international rectifier january 09, 2013

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